p p ja138k november 13,2014 - rev.02 page 1 5 0 v n - c hannel enhancement mode mosfet C esd protected voltage 50 v current 500m a sot - 23 unit : inch(mm) f eatures ? rds(on) , vgs @ 10 v , id @ 500m a< 1.6 ? ? r ds(on) , vgs@ 4.5 v , i d @ 200m a< 2.5 ? ? rds(on) , vgs @ 2 .5 v, id @ 100m a< 4.5 ? ? advanced trench process technology ? specially designed for battery operated systems, solid - state relays drivers: relay , displays, memories, etc. ? esd protected 2 kv hbm ? lead free in complia nce with eu rohs 2011/65/eu directive . ? green molding compound as per iec61249 std. (halogen free) mechanical data ? case: sot - 2 3 package ? terminals : solderable per mil - std - 750, method 2026 ? approx. weight: 0.0003 ounces, 0.0084 grams parameter sym bol limit units drain - source voltage v ds 5 0 v gate - source voltage v gs + 2 0 v continuous drain current i d 500 m a pulsed drain current i dm 12 0 0 m a power dissipation t a =25 o c p d 50 0 m w derate above 25 o c 4 m w/ o c operatin g junction an d storage temper ature range t j ,t stg - 55~150 o c typical thermal resistance - j unction to ambient (note 3 ) r ja 250 o c /w maximum ratings and thermal characteristics (t a =25 o c unless otherwise noted)
p p ja138k november 13,2014 - rev.02 page 2 e lectrical c haracteristics (t a =25 o c unless otherwise noted) parame ter symbol test condition min. typ. max. units static drain - source breakdown voltage bv dss v gs = 0 v,i d = 25 0ua 5 0 - - v gate threshold voltage v gs(th) v ds = v gs , i d = 250 ua 0.8 1.0 1.5 v drain - source on - state resistance r ds(on) v gs = 10 v,i d = 500 m a - 0.9 6 1.6 gs = 4.5 v,i d = 2 00m a - 1.2 5 2.5 v gs = 2.5 v,i d = 100m a - 2. 73 4.5 zero gate voltage drain current i dss v ds = 50 v,v gs =0v - 0.01 1 u a gate - source leakage current i gss v gs = + 2 0 v,v ds =0v - + 3.0 + 10 u a dynamic total gate charge q g v ds = 25 v, i d = 250m a, v gs = 4.5v (no te 1 , 2 ) - 0.63 1 nc gate - source charge q gs - 0.2 - gate - drain charge q gd - 0.23 - input capacitance ciss v ds =25v, v gs = 0 v, f=1.0mhz - 25 50 pf output capacitance coss - 9.5 2 0 reverse transfer capacitance crss - 2. 1 5 switching turn - on delay time t d (on) v dd = 25 v, i d = 500m a, v g s = 10v, r g = 6 (note 1 , 2 ) - 2.2 5 ns turn - on rise time tr 19.2 38 turn - o ff delay time t d (off) 6.2 12 turn - o ff fall time tf - 23 50 drain - source diode maximum continuous drain - source diode forward current i s --- - - 500 m a diode forward voltage v sd i s = 500m a, v gs = 0 v 0.86 1.5 v notes: 1. pulse width < 300us, duty cycle < 2% 2. essentially independent of operating temperature typical characteristics . 3. r ? ja is the sum of the junction - to - case and case - to - ambient thermal res istance where the case thermal reference is defined as the solder mounting surface of the drain pins. mount ed on a 1 inch square pad of copper
p p ja138k november 13,2014 - rev.02 page 3 t ypical characteristic curves fig.1 on - region characteristics fig. 2 transfer characteristics fig. 3 on - resistance vs. drain current fig. 4 on - resistance vs. junction temperature fig. 5 on - resistance variation with vgs. fig. 6 body dlode characterlslcs
p p ja138k november 13,2014 - rev.02 page 4 t ypical characteristic curves fig. 7 gate - charge characteristics fi g. 8 breakdown voltage variation vs. temperature fig. 9 threshold voltage variation with temperature . fig. 10 capacitance vs. drain - source voltage .
p p ja138k november 13,2014 - rev.02 page 5 part no packing code version mounting pad layout p art n o packing code v ersion package type packing type ma rking ver sion pja138k_r1_00001 sot - 23 3k pcs / 7
p p ja138k november 13,2014 - rev.02 page 6 disclaimer
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